• 78. Xiao-Dong Li, Maoan Tian, Bai-Qian Wang, Nian-Ke Chen, and Xian-Bin Li, Atomic and electronic origin of robust off-state insulation properties in Al-rich AlxTey glass for ovonic threshold switching applications, J. Appl. Phys. 134, 204502 (2023).
  • 77. Bai-Qian Wang, Xian-Bin Li, and Hong-Bo Sun, In-memory computing based on photonic-electronic hybrid phase-change cells, Sci. Bull. 68, 2500-2502 (2023).
  • 76. Bin Chen, Xue-Peng Wang, Fangying Jiao, Long Ning, Jiaen Huang, Jiatao Xie, Shengbai Zhang, Xian-Bin Li, and Feng Rao, Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow-Drift Phase-Change Memory Applications, Adv. Sci. 10, 2301043 (2023).

  • 75. Xiao-Dong Li, Bai-Qian Wang, Nian-Ke Chen, and Xian-Bin Li, Resistive switching mechanism of MoS2 based atomristor,  Nanotechnology. 34, 205201 (2023)

  • 74. Ming-Yu Ma, Nian-Ke Chen, Dan Wang, Dong Han, Hong-Bo Sun, Shengbai Zhang, and Xian-Bin Li, Defect physics in 2D monolayer I-VII semiconductor AgI, Mater. Today Nano, 22, 100304 (2023).
  • 73. Yingpeng Qi, Nian-Ke Chen, Thomas Vasileiadis, Daniela Zahn, Helene Seiler, Xian-Bin Li, and Ralph Ernstorfer, Photoinduced Ultrafast Transition of the Local Correlated Structure in Chalcogenide Phase-Change Materials, Phys. Rev. Lett. 129, 135701 (2022).
  • 72. Xiao-Dong Li, Nian-Ke Chen, Bai-Qian Wang, and Xian-Bin Li,Conductive mechanism in memristor at the thinnest limit: The case based on monolayer boron nitride, Appl. Phys. Lett. 121, 073505 (2022).
  • 71. Yu-Ting Huang, Nian-Ke Chen, Zhen-Ze Li, Xue-Peng Wang, Hong-Bo Sun, Shengbai Zhang, and Xian-Bin Li, Two-dimensional In2Se3: A rising advanced material for ferroelectric data storageInfoMat. e12341 (2022).
  • 70. Zhanxin Wang, Nianke Chen, Xianbin Li, Jiao Teng, Yizhong Guo, Libo Fu, Zihao Zhang, Evan Ma, Lihua Wang, Ze Zhang, and  Xiaodong Han, Atomic-scale observation of strain-induced local amorphization in face-centered cubic metals, Scr. Mater. 212, 114553 (2022)
  • 69. Dong Han, Xian-Bin Li, Dan Wang, Nian-Ke Chen, and Xi-Wu Fan, Doping in the two-dimensional limit: p/n-type defects in monolayer ZnO, Phys. Rev. B  105,024104 (2022)
  • 68. Xue-Peng Wang, Xian-Bin Li, Nian-Ke Chen, Bin Chen, Feng Rao, and Shengbai Zhang, Phase-Change-Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb2Te3, Adv. Sci. 8, 2004185 (2021)
  • 67. Nian-Ke Chen, Bai-Qian Wang, Xue-Peng Wang, and Xian-Bin Li, Orbital-selective electronic excitation in phase-change memory materials: a brief review, Z. Naturforsch. B. Chen, 76, 537-541 (2021).
  • 66. Yu-Ting Huang, Nian-Ke Chen, Zhen-Ze Li, Xian-Bin Li, Xue-Peng Wang, Qi-Dai Chen, Hong-Bo Sun, and Shengbai Zhang,
    Mexican-hat potential energy surface in two-dimensional III2-VI3 materials and the importance of entropy barrier in ultrafast
    reversible ferroelectric phase change, Appl. Phys. Rev. 8, 031413 (2021)
  • 65. Dan Wang, Xian-Bin Li, and Hong-Bo Sun, Modulation Doping: A Strategy for 2D Materials Electronics, Nano Lett. 21, 6298 (2021)
  • 64. Liwei Liu, Han Yang, Yuting Huang, Xuan Song, Quanzhen Zhang, Zeping Huang, Yanhui Hou, Yaoyao Chen, Ziqiang Xu, Teng Zhang, Xu Wu, Jiatao Sun, Yuan Huang, Fawei Zheng, Xianbin Li, Yugui Yao, Hong-Jun Gao, and Yeliang Wang, Direct identification of Mott Hubbard band pattern beyond charge density wave superlattice in monolayer 1T-NbSe2, Nat. Commun. 12, 1978 (2021)
  • 63. Nian-Ke Chen, Yu-Ting Liu, Xue-Peng Wang, and Xian-Bin Li, Nucleation Dynamics of Phase‐Change Memory Materials: Atomic Motion and Property Evolution,Phys. Status Solidi RRL, 15, 2000441 (2021)
  • 62. Yu-Ting Liu, Xian-Bin Li, Hui Zheng, Nian-Ke Chen, Xue-Peng Wang, Xu-Lin Zhang, Hong-Bo Sun, and Shengbai Zhang, High-Throughput Screening for Phase-Change Memory Materials, Adv. Funct. Mater. 31, 2009803 (2021)
  • 61.陈念科, 黄宇婷, 李贤斌, 孙洪波, 超快激光诱导固体非热相变及其原子机理进展, 中国激光, 48, 0202001 (2021)
  • 60. Nian-Ke Chen, Junhyeok Bang, Xian-Bin Li, Xue-Peng Wang, Dan Wang, Qi-Dai Chen, Hong-Bo Sun, and Shengbai Zhang, Optical subpicosecond nonvolatile switching and electron-phonon coupling in ferroelectric materials, Phys. Rev. B 102, 184115 (2020)
  • 59. Ji-Hong Zhao, Xian-Bin Li, Qi-Dai Chen, Zhan-Guo Chen, Hong-Bo Sun, Ultrafast laser-induced black silicon, from micro nanostructuring, infrared absorption mechanism, to high performance detecting devices, Materials Today Nano. 11, 100078 (2020)
  • 58. Sha Xia, Dan Wang, Nian-Ke Chen, Dong Han, Xian-Bin Li, and Hong-Bo Sun, Evaluation of Charged Defect Energy in Two-Dimensiona Semiconductors for Nanoelectronics: The WLZ Extrapolation Method, Ann. Phys. (Berlin). 523, 1900318 (2020)
  • 57. Xue-Peng Wang, Xian-Bin Li, Nian-Ke Chen, Junhyeok Bang, Ryky Nelson, Christina Ertural, Richard Dronskowski, Hong-Bo Sun, and Shengbai Zhang, Time-dependent density-functional theory molecular-dynamics study on amorphization of Sc-Sb-Te alloy under optical excitation, npj Comput. Mater. 6, 31 (2020)
  • 56. Xue-Peng Wang, Yu-Ting Liu, Yong-Jin Chen, Nian-Ke Chen and Xian-Bin Li,Nanoscale amorphous interfaces in phase-change memory materials:structure, properties and design, J. Phys. D: Appl. Phys. 53, 114002 (2020)
  • 55. Nian-Ke Chen, Xian-Bin Li, Unconventional phase transition of phase-change-memory materials for optical data storage(TOPICAL REVIEW—A celebration of the 100th birthday of Kun Huang), Chin. Phys. B 28,104202 (2019)
  • 54. Yong-Lai Zhang, Yu-Qing Liu, Dong-Dong Han, Jia-Nan Ma, Dan Wang, Xian-Bin Li, and Hong-Bo Sun, Quantum-Confned-Superfluidics-Enabled Moisture Actuation Based on Unilaterally Structured Graphene Oxide Papers, Adv. Mater. 1901585 (2019)
  • 53. Sheng‐Yi Xie, Yeliang Wang, and Xian‐Bin Li, Flat Boron: A New Cousin of Graphene, Adv. Mater. 1900392 (2019)
  • 52. Ran Ding, Feng-Xi Dong, Ming-Hui An, Xue-Peng Wang, Mo-Ran Wang, Xian-Bin Li, Jing Feng, and Hong-Bo SunHigh-Color-Rendering and High-Effciency White Organic Light-Emitting Devices Based on Double-Doped Organic Single CrystalsAdv. Funct. Mater., 1807606 (2019)
  • 51. Yongjin Chen, Xuepeng Wang, Qing Zhang, Qingsong Deng, Xianbin Li, Bin Zhang, Ze Zhang, Xiaodong Han, Stability enhancement of the metastable cubic Sb2Te3 in supperlattice-like films. Mater. Lett. 243, 153 (2019)
  • 50. Dan Wang, Dong Han, Damien West, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Vincent Meunier, Shengbai Zhang, and XianBin Li, Excitation to defect-bound band edge states in twodimensional semiconductors and its effect on carrier transport. npj Computational Materials 5:8 (2019)
  • 49. Yongjin Chen, Nianke Chen, Bin Chen, Qing Zhang, Xianbin Li, Qingsong Deng, Bin Zhang, Shengbai Zhang, Ze Zhang, and Xiaodong Han,  Electrical properties and structural transition of Ge2Sb2Te5 adjusted by rare-earth element Gd for nonvolatile phase-change memory. J. Appl. Phys. 124, 145107 (2018)
  • 48. Ran Ding, Xue-Peng Wang, Jing Feng, Xian-Bin Li, Feng-Xi Dong, Wei-Quan Tian, Jia-Ren Du, Hong-Hua Fang, Hai-Yu Wang, Takeshi Yamao, Shu Hotta, and Hong-Bo Sun, Clarifcation of the Molecular Doping Mechanism in Organic Single-Crystalline Semiconductors and their Application in Color-Tunable Light-Emitting Devices. Adv. Mater. 1801078 (2018)
  • 47. Xian-Bin Li,  Nian-Ke Chen,  Xue-Peng Wang and Hong-Bo Sun, Phase-Change Superlattice Materials toward Low Power Consumption and High Density Data Storage: Microscopic Picture, Working Principles, and Optimization. Adv. Funct. Mater., 1803380 (2018)
  • 46. Xiang-Yang Ren, Sha Xia, Xian-Bin Li, Nian-Ke Chen, Xue-Peng Wang, Dan Wang, Zhan-Guo Chen, Shengbai Zhang and Hong-Bo Sun, Non-phase-separated 2D B–C–N alloys via molecule-like carbon doping in 2D BN: atomic structures and optoelectronic properties. Phys. Chem. Chem. Phys. 20, 23106 (2018)
  • 45. Nian-Ke Chen, Xian-Bin Li, Junhyeok Bang, Xue-Peng Wang, Dong Han, Damien West, Shengbai Zhang and Hong-Bo Sun, Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe. Phys. Rev. Lett. 120, 185701 (2018)
  • 44. Chun-Hao Li, Xue-Peng Wang, Ji-Hong Zhao, De-Zhong Zhang, Xin-Yue Yu, Xian-Bin Li, Jing Feng, Qi-Dai Chen, Sheng-Ping Ruan and Hong-Bo Sun, Black Silicon IR Photodiode Supersaturated With Nitrogen by Femtosecond Laser Irradiation. IEEE Sensor J. 18, 3595 (2018)
  • 43. Xue-Peng Wang, Xian-Bin Li,  Nian-Ke Chen, Ji-Hong Zhao, Qi-Dai Chen and Hong-Bo Sun, Electric field analyses on monolayer semiconductors: the example of InSe. Phys. Chem. Chem. Phys. 20, 6945(2018)
  • 42. Nian-Ke Chen, Xian-Bin Li , Xue-Peng Wang, Sheng-Yi Xie, Wei Quan Tian, Shengbai Zhang, and Hong-Bo Sun, Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study. IEEE T. Nanotechnol. 17, 140 (2018)
  • 41. Nian-Ke Chen, Xian-Bin Li, Xue-Peng Wang, Wei Quan Tian, Shengbai Zhang and Hong-Bo Sun, Strong electron-polarized atom chain in amorphous phase-change memory GeSbTe alloy. Acta Mater. 143, 102 (2018)
  • 40. Dan Wang, Xian-Bin Li, Dong Han, Wei Quan Tian and Hong-Bo Sun, Engineering two-dimensional electronics by semiconductor defects. Nano Today 16, 30 (2017)
  • 39. Dan Wang, Dong Han, Xian-Bin Li, Nian-Ke Chen, Damien West, Vincent Meunier, Shengbai Zhang and Hong-Bo Sun, Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus. Phys. Rev. B 96, 155424 (2017)
  • 38. Mo-Ran Wang, Xiang-Yang Ren, Xian-Bin Li,  Nian-Ke Chen and Hong-Bo Sun, Electronic excitation induced hydrogen-bond adjustment and lattice control in organic–inorganic hybrid cubic perovskites: a fixed occupation molecular dynamics study. Phys. Chem. Chem. Phys. 19, 26165 (2017)
  • 37. Nian-Ke Chen, Dong Han, Xian-Bin Li, Feng Liu, Junhyeok Bang, Xue-Peng Wang, Qi-Dai Chen, Hai-Yu Wang, Shengbai Zhang and Hong-Bo Sun, Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Phys. Chem. Chem. Phys. 19, 24735 (2017)
  • 36. Dan Wang, Xian-Bin Li and Hong-Bo Sun, Native defects and substitutional impurities in two-dimensional monolayer InSe. Nanoscale 9, 11619 (2017)
  • 35. Xue-Peng Wang, Xian-Bin Li, Nian-Ke Chen, Qi-Dai Chen, Xiao-Dong Han, Shengbai Zhang, and Hong-Bo Sun, Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory. Acta Mater. 136, 242 (2017)
  • 34. Ran Ding, Feng-Xi Dong, Wei Zhou, Yang Liu, Xu-Lin Zhang, Xue-Peng Wang, Hong-Hua Fang, Bin Xu, Xian-Bin Li, Hai-Yu Wang, Shu Hotta, Jing Feng and Hong-Bo Sun, Highly Efficient Three Primary Color Organic Single-Crystal Light-Emitting Devices with Balanced Carrier Injection and Transport, Adv. Funct. Mater. 1604659 (2017)

  • 33. Lei Wang, Zhuo Wang, Hai-Yu Wang, Gustavo Grinblat, Yu-Li Huang, Dan Wang, Xiao-Hui Ye, Xian-Bin Li, Qiaoliang Bao, AndrewThye-Shen Wee, Stefan A. Maier, Qi-Dai Chen, Min-Lin Zhong, Cheng-Wei Qiu and Hong-Bo Sun, Slow cooling and efficient extraction of C-exciton hot carriers in MoS2 monolayer, Nat. Commun. 8, 13906 (2017) 

  • 32. Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, Wei Quan Tian, Shengbai Zhang, and Hong Bo Sun,Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation,Appl. Phys. Lett. 109, 203113 (2016)

  • 31. Bin Zhang, Xue-Peng Wang, Zhen-Ju Shen, Xian-Bin Li, Chuan-Shou Wang,  Yong-Jin Chen, Ji-Xue Li, Jin-Xing Zhang, Ze Zhang, Sheng-Bai Zhang and Xiao-Dong Han, Vacancy Structures and Melting Behavior in Rock-Salt GeSbTe, Sci. Rep. 6, 25453 (2016)
  • 30. Jia-Ren Du, Nian-Ke Chen, Xian-Bin Li, Sheng-Yi Xie, Wei Quan Tian, Xian-Yin Wang, Hai-Ling Tu and Hong-Bo Sun, Exploring long-wave infrared transmitting materials with AxBy form: First-principles gene-like studies, Sci. Rep. 6, 21912 (2016)
  • 29. Xian-Bin Li, Sheng-Yi Xie, Hui Zheng, Wei Quan Tian and Hong-Bo Sun, Boron based two-dimensional crystals: theoretical design, realization proposal and applications, Nanoscale 7, 18863 (2015)

  • 28. Hui Zheng, Xian-Bin Li, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Yuanping Chen, Hong Xia, S. B. Zhang, and Hong-Bo Sun, Monolayer II-VI semiconductors: A first-principles prediction, Phys. Rev. B 92, 115307 (2015)

  • 27. Dan Wang, Dong Han, Xian-Bin Li, Sheng-Yi Xie, Nian-Ke Chen, W. Q. Tian, Damien West, Hong-Bo Sun and S. B. Zhang, Determination of formation and ionization energies of charged defects in two-dimensional materials, Phys. Rev. Lett. 114, 196801 (2015
  • 26. Nian-Ke Chen, Xian-Bin Li, Xue-Peng Wang, Meng-Jiao Xia, Sheng-Yi Xie, Hai-Yu Wang, Zhitang Song, Shengbai Zhang and Hong-Bo Sun, Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization, Acta Mater. 90, 88 (2015)

  • 25. Mengjiao Xia, Keyuan Ding, Feng Rao, Xian-Bin Li, Liangcai Wu, Zhitang Song, Aluminum-Centered Tetrahedron-Octahedron Transition in Advancing Al-Sb-Te Phase Change Properties, Sci. Rep. 5, 8548 (2015)
  • 24. Sheng-Yi Xie, Xian-Bin Li, Wei Quan Tian, Nian-Ke Chen, Yeliang Wang, Shengbai Zhang, and Hong-Bo Sun, Novel two-dimensional MgB6 crystal: metal-layer stabilized boron kagome lattice, Phys. Chem. Chem. Phys. 17, 1093 (2015).
  • 23. Dong Han, Xian-Bin Li, Y. Y. Sun, S. B. Zhang, Sheng-Yi Xie, S Limpijumnong, Z. G. Chen, Role of hydrogen in the growth of boron nitride: Cubic phase versus hexagonal phase, Comput. Mater. Sci. 82, 310 (2014)
  • 22. X. Zhou, M. Xia, F. Rao, L. Wu, Xian-Bin Li, Z. Song, S. Feng, Hong-Bo Sun, Understanding phase-change behaviors of carbon-doped Ge2Sb2Te5 for phase-change memory application, ACS Appl. Mater. Inter. 6 (16), 14207 (2014)
  • 21. Sheng-Yi Xie, Xian-Bin Li, Wei-Quan Tian, Dan Wang, Nian-Ke Chen, Dong Han, and Hong-Bo Sun, Slide fastener reduction of graphene oxide edges by calcium: insight from ab initio molecular dynamics, Chem. Phys. Chem. 15, 2707 (2014).
  • 20. Sheng-Yi Xie, Xian-Bin Li, Wei-Quan Tian, Nian-Ke Chen, Xu-Lin Zhang, Ye-Liang Wang, Sheng-Bai Zhang, and Hong-Bo Sun, First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer, Phys. Rev. B 90, 035447 (2014).
  • 19. Xue-Peng Wang, Nian-Ke Chen, Xian-Bin Li, Yan Cheng, Xue-Qing Liu, Meng-Jiao Xia, Zhi-Tang Song, Xiao-Dong Han, Sheng-Bai Zhang, and Hong-Bo Sun, Role of nano amorphous interface in crystallization of Sb2Te3 towards nonvolatile phase change memory from first principles insight, Phys. Chem. Chem. Phys. 16, 10810 (2014).
  • 18. M. Zhu, Meng-Jiao Xia, F. Rao, Xian-Bin Li, L. Wu, X. Ji, S. Lv, Z. Song, S. Feng, Hong-Bo Sun, Sheng-Bai Zhang, One order of magnitude faster phase change at reduced power in Ti-Sb-Te, Nature Commun. 5, 4086 (2014)
  • 17. Li Guo, Yong-Lai Zhang, Dong-Dong Han, Hao-Bo Jiang, Dan Wang, Xian-Bin Li, Hong Xia, Jing Feng, Qi-Dai Chen, and Hong-Bo Sun, Laser-mediated programmable N-doping and simultaneous reduction of graphene oxides, Adv. Opt. Mater. 2, 120 (2014)
  • 16. Ji-Hong Zhao, Xian-Bin Li, Z. G. Chen, X. Meng, G. Jia, Precise measurement of weak strain by second-harmonic generation from silicon (111) surface, J. Opt. Soc. Am. B, 30 (5), 1200 (2013)
  • 15. Y. Yue, Nian-Ke Chen, Xian-Bin Li, S. B. Zhang, Z. Zhang, M. Chen, X. Han, Crystalline Liquid and Rubber-Like Behavior in Cu Nanowires, Nano lett. 13 (8), 3812 (2013)
  • 14. Sheng-Yi Xie, Xian-Bin Li, Y. Y. Sun, Y.L. Zhang, D. Han, W. Q. Tian, W. Q. Wang, Y. S. Zheng, Theoretical characterization of reduction dynamics for graphene oxide by alkaline-earth metals, Carbon 52, 122 (2013)
  • 13. L. Li, Y. Wang, Sheng-Yi Xie, Xian-Bin Li, Y. Q. Wang, R. Wu, Hong-Bo Sun, S. B. Zhang, H. J. Gao, Two-dimensional transition metal honeycomb realized: Hf on Ir (111), Nano lett. 13 (10), 4671 (2013)
  • 12. Dong Han, Y. Y. Sun, J. Bang, Y. Y. Zhang, H. B. Sun, Xian-Bin Li, S. B. Zhang, Deep electron traps and origin of p-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4, Phys. Rev. B 87 (15), 155206 (2013)
  • 11. X. Q. Liu, Xian-Bin Li, L. Zhang, Y. Q. Cheng, Z. G. Yan, M. Xu, X. D. Han, S. B. Zhang, Liu et al. Reply Phys. Rev. Lett. 108 (23), 239602

  • 10. Xian-Bin Li, X. Q. Liu, X. D. Han, S. B. Zhang, Role of electronic excitation in phase‐change memory materials: A brief review, Phys. status solidi (b) 249 (10), 1861 (2012)
  • 9. X. Q. Liu, Xian-Bin Li, B. Zhang, S. B. Zhang, E. Ma, Z. Zhang, X. D. Han, Truncated Lorch‐window method revealing the off‐octahedral Ge in nanocrystalline Ge2Sb2Te5, Phys. status solidi (b) 249 (10), 1914 (2012)

  • 8. Wei Liu, Feng-Chun Pang, Hailing Tu, Xian-Bin Li, Xiaoping Su, Shuyu Zhang, Chengsong Huo, Hai Yang, The atomic and electronic structure of amorphous BP4, J. Alloy. Compd. 554, 144 (2012)
  • 7. P. Sun, L. You, Y. Sun, N. Chen, Xian-Bin Li, Hong-Bo Sun, J. Ma, G. Lu, Novel Zn-doped SnO 2 hierarchical architectures: synthesis, characterization, and gas sensing properties, Cryst. Eng. Comm. 14 (5), 1701 (2012)

  • 6. Li Guo, Rui-Qiang Shao, Yong-Lai Zhang, Hao-Bo Jiang, Xian-Bin Li, Sheng-Yi Xie, Bin-Bin Xu, Qi-Dai Chen, Jun-Feng Song, and Hong-Bo Sun, Bandgap tailoring and synchronous microdevices patterning of graphene oxides, J. Phys. Chem. C 116, 3594 (2012)

  • 5. Li Guo, Yong-Lai Zhang, Rui-Qiang Shao, Sheng-Yi Xie, Jian-Nan Wang, Xian-Bin Li, Fan Jiang, Hao-Bo Jiang, Qi-Dai Chen, Tong Zhang, and Hong-Bo Sun,Two-beam-laser interference mediated reduction, patterning and nanostructuring of graphene oxide for flexible humidity sensing device, Carbon 50, 1667 (2012)

  • 4. XQ Liu, Xian-Bin Li, L Zhang, YQ Cheng, ZG Yan, M Xu, XD Han, SB Zhang, New structural picture of the Ge 2 Sb 2 Te 5 phase-change alloy, Phys. Rev. Lett. 106 (2), 025501 (2011)
  • 3. Xian-Bin Li, Xiu-Quan Liu, Xin Liu, Dong Han, Ze Zhang, Xiao-Dong Han, Hong-Bo Sun, and Sheng-Bai Zhang, Role of electronic excitation in the amorphization of Ge-Sb-Te alloys, Phys. Rev. Lett. 107, 015501 (2011).

  • 2. Dong Han, Damien West, Xian-Bin Li, Sheng-Yi Xie, Hong-Bo Sun, and Sheng-Bai Zhang, Impurity doping in SiO2: Formation energies and defect levels from first-principles calculations, Phys. Rev. B 82, 155132 (2010)

  • 1. Xian-Bin Li, Sukit Limpijumnong, Wei-Quan Tian, Hong-Bo Sun, and Sheng-Bai Zhang,Hydrogen in ZnO revisited: Bond center versus antibonding site, Phys. Rev. B 78, 113203 (2008)