Biosketch:

2009--2014, Ph.D student in Microelectronics, Jilin University, China

2011--2013, Visiting student, Rensselaer Polytechnic Institute-Condensed Matter Physics

2009-2007 Master Degree in electronic science & technology from college of science & engineering, Jilin University, Changchun, China

2007-2003 Bachelor Degree in electronic science & technology from college of science & engineering, Jilin University, Changchun, China, 2007.

Reseach Area:

Focus on Defect and doping physics, structural and electronic properties of wide band gap materials with first-principles calculation.

Publications:

Deep electron traps and origin of p-type conductivity in the earth-abundant solar-cell material Cu 2 ZnSnS4

D Han, YY Sun, J Bang, YY Zhang, HB Sun, XB Li, SB Zhang

Physical Review B 87 (15), 155206

Impurity doping in SiO 2: Formation energies and defect levels from first-principles calculations

D Han, D West, XB Li, SY Xie, HB Sun, SB Zhang

Physical Review B 82 (15), 155132

Role of hydrogen in the growth of boron nitride: Cubic phase versus hexagonal phase

D Han, XB Li, YY Sun, SB Zhang, SY Xie, S Limpijumnong, ZG Chen, ...

Computational Materials Science 82, 310-313

Role of electronic excitation in the amorphization of Ge-Sb-Te alloys

XB Li, XQ Liu, X Liu, D Han, Z Zhang, XD Han, HB Sun, SB Zhang

Physical review letters 107 (1), 015501

Theoretical characterization of reduction dynamics for graphene oxide by alkaline-earth metals

SY Xie, XB Li, YY Sun, YL Zhang, D Han, WQ Tian, WQ Wang, YS Zheng, ...

Carbon 52, 122-127