• Xue-Peng Wang 王雪鹏
  • Postdoctor
  • Department of Chemical and Environmental Engineering, University of California, Riverside


2015.9-2019.7: Ph.D. College of Electronic Science and Engineering, Jilin University, China

2012.9-2015.7:  M.Sc., College of Electronic Science and Engineering, Jilin University, China

2008.9-2012.7:  B.Sc., College of Material Science and Engineering, Jilin University, China

Research Area:

First-principles calculations on switching mechanism and new design of materials for phase change memory devices.

Selected Publications:

1. Xue-Peng Wang, X. B. Li, N. K. Chen, Q. D. Chen, X. D. Han, S. B. Zhang and H. B. Sun, Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory, Acta Mater., 136, 242-248 (2017).

2. Ran Ding#, Xue-Peng Wang#(Co-first author), J. Feng, X.B. Li, F. X. Dong, W. Q. Tian, J. R. Du, H. H. Fang, H. Y. Wang, T. Yamao, S. Hotta and H. B. Sun, Clarification of the molecular doping mechanism in organic single-crystalline semiconductors and their application in color-tunable light-emitting devices, Adv. Mater., 30, 1801078 (2018).

3. Xue-Peng Wang, Ni. K. Chen, X. B. Li, Y. Cheng, X. Q. Liu, M. J. Xia, Z. T. Song, X. D. Han, S. B. Zhang and H. B. Sun, Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles, Phys. Chem. Chem. Phys., 16 10810-10815 (2014).

4. Xue-Peng Wang, X. B. Li, N. K. Chen, J. H. Zhao, Q. D. Chen and H. B. Sun, Electric field analyses on monolayer semiconductors: the example of InSe, Phys. Chem. Chem. Phys., 20, 6945-6949 (2018).

5. Xue-Peng Wang, Y. T. Liu, Y. J. Chen, N. K. Chen and X. B. Li, Nano amorphous interface in phase-change memory materials: structure, property and design, J. Phys. D: Appl. Phys. (2019) https://doi.org/10.1088/1361-6463/ab5d81 (in press).

6. Chun-Hao Li#, Xue-Peng Wang# (Co-first author), J. H. Zhao, D. Z. Zhang, X. Y. Yu, X. B. Li, J. Feng, Q. D. Chen, S. P. Ruan and H. B. Sun, Black silicon IR photodiode supersaturated with nitrogen by femtosecond laser irradiation, IEEE Sensor J. 18, 3595 (2018).

7. Bin Zhang#, Xue-Peng Wang# (Co-first author), Zhen-Ju Shen, Xian-Bin Li, Chuan-Shou Wang, Yong-Jin Chen, Ji-Xue Li, Jin-Xing Zhang, Ze Zhang, Sheng-Bai Zhang and Xiao-Dong Han, Vacancy structures and melting behavior in rock-salt GeSbTe, Sci. Rep. 6, 25453 (2016).